75 a 95 a new add-a-pak tm power modules thyristor/ diode and thyristor/ thyristor irk.71, .91 series bulletin i27132 rev. d 09/97 1 www.irf.com parameters irk.71 irk.91 units i t(av) or i f(av) @ 85c i o(rms) (*) 165 210 a i tsm @ 50hz 1665 1785 a i fsm @ 60hz 1740 1870 a i 2 t @ 50hz 13.86 15.91 ka 2 s @ 60hz 12.56 14.52 ka 2 s i 2 ? t 138.6 159.1 ka 2 ? s v rrm range 400 to 1600 v t stg - 40 to 125 o c t j - 40 to125 o c (*) as ac switch. these irk series of new add-a-paks use power diodes and thyristors in a variety of circuit configu- rations. the semiconductor chips are electrically isolated from the base plate, allowing common heatsinks and compact assemblies to be built. they can be interconnected to form single phase or three phase bridges or ac controllers. these modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, and temperature and motor speed control circuits. 75 95 a major ratings and characteristics features electrically isolated: dbc base plate 3500 v rms isolating voltage standard jedec package simplified mechanical designs, rapid assembly auxiliary cathode terminals for wiring convenience high surge capability wide choice of circuit configurations large creepage distances ul e78996 approved description
irk.71, .91 series 2 bulletin i27132 rev. d 09/97 www.irf.com on-state conduction i t(av) max. average on-state current (thyristors) 180 o conduction, half sine wave, i f(av) max. average forward t c = 85 o c current (diodes) i o(rms ) max. continuous rms on-state current. 165 210 as ac switch i tsm max. peak, one cycle 1665 1785 t=10ms no voltage or non-repetitive on-state 1740 1870 t=8.3ms reapplied i fsm or forward current 1400 1500 t=10ms 100% v rrm 1470 1570 t=8.3ms reapplied 1850 2000 t=10ms t j = 25 o c, 1940 2100 t=8.3ms no voltage reapplied i 2 t max. i 2 t for fusing 13.86 15.91 t=10ms no voltage 12.56 14.52 t=8.3ms reapplied 9.80 11.25 t=10ms 100% v rrm 8.96 10.27 t=8.3ms reapplied 17.11 20.00 t=10ms t j = 25 o c, 15.60 18.30 t= 8.3ms no voltage reapplied i 2 ? t max. i 2 ? t for fusing (1) 138.6 159.1 ka 2 ? s t=0.1 to 10ms, no voltage reapplied v t(to) max. value of threshold 0.82 0.80 low level (3) voltage (2) 0.85 0.85 high level (4) r t max. value of on-state 3.00 2.40 low level(3) slope resistance (2) 2.90 2.25 high level (4) v tm max. peak on-state or i tm = p x i t(av) v fm forward voltage i fm = p x i f(av) di/dt max. non-repetitive rate t j = 25 o c, from 0.67 v drm , of rise of turned on 150 a/s i tm = p x i t(av) , i g = 500ma, current t r < 0.5 s, t p > 6 s i h max. holding current 200 t j = 25 o c, anode supply = 6v, resistive load, gate open circuit i l max. latching current 400 t j = 25 o c, anode supply = 6v, resistive load parameters irk.71 irk.91 units conditions initial t j = t j max. a ka 2 s v m w 1.59 1.58 v ma or i (rms) i (rms) electrical specifications voltage ratings type number v rrm , maximum v rsm , maximum v drm , max. repetitive i rrm voltage repetitive non-repetitive peak off-state voltage, i drm code peak reverse voltage peak reverse voltage gate open circuit 125c -vvvma 04 400 500 400 06 600 700 600 08 800 900 800 irk.71/ .91 10 1000 1100 1000 15 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 sinusoidal half wave, initial t j = t j max. 75 95 t j = t j max t j = t j max t j = 25c (1) i 2 t for time t x = i 2 ? t x ? t x (2) average power = v t(to) x i t(av) + r t x (i t(rms) ) 2 (3) 16.7% x p x i av < i < p x i av (4) i > p x i av
irk.71, .91 series 3 bulletin i27132 rev. d 09/97 www.irf.com i rrm max. peak reverse and i drm off-state leakage current at v rrm , v drm 2500 (1 min) 50 hz, circuit to base, all terminals 3500 (1 sec) shorted dv/dt max. critical rate of rise t j = 125 o c, linear to 0.67 v drm , of off-state voltage (5) gate open circuit t j junction operating temperature range t stg storage temp. range - 40 to 125 r thjc max. internal thermal resistance, junction 0.165 0.135 per module, dc operation to case r thcs typical thermal resistance case to heatsink t mounting torque 10% to heatsink busbar 3 wt approximate weight 83 (3) g (oz) case style to-240aa jedec 15 ma t j = 125 o c, gate open circuit thermal and mechanical specifications 500 v/ m s parameters irk.71 irk.91 units conditions - 40 to 125 0.1 5 triggering blocking (5) available with dv/dt = 1000v/ m s, to complete code add s90 i.e. irkt91/16 s90. a mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound k/w nm mounting surface flat, smooth and greased. flatness < 0.03 mm; roughness < 0.02 mm v ins rms isolation voltage v p gm max. peak gate power 12 12 p g(av) max. average gate power 3.0 3.0 i gm max. peak gate current 3.0 3.0 a -v gm max. peak negative gate voltage v gt max. gate voltage 4.0 t j = - 40c required to trigger 2.5 t j = 25c 1.7 t j = 125c i gt max. gate current 270 t j = - 40c required to trigger 150 ma t j = 25c 80 t j = 125c v gd max. gate voltage t j = 125 o c, that will not trigger rated v drm applied i gd max. gate current t j = 125 o c, that will not trigger rated v drm applied parameters irk.71 irk.91 units conditions 0.25 v 6ma w v 10 anode supply = 6v resistive load anode supply = 6v resistive load c parameters irk.71 irk.91 units conditions
irk.71, .91 series 4 bulletin i27132 rev. d 09/97 www.irf.com sine half wave conduction rect. wave conduction devices units 180 o 120 o 90 o 60 o 30 o 180 o 120 o 90 o 60 o 30 o irk.71 0.06 0.07 0.09 0.12 0.18 0.04 0.08 0.10 0.13 0.18 irk.91 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12 c/w d r conduction (per junction) (the following table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc) outlines table irkt../.. (*) irkl../.. (*) irkh../.. (*) (*) for terminals connections, see circuit configurations table all dimensions in millimeters (inches) 30 0.5 (1.18 0.02 ) 29 0.5 ( 1.1 3 0.0 2) 6.1 0.3 ( 0.24 0.01) 24 0.5 18 ref. (0.71) 15.5 0.5 (0.61 0.02) 30 0.1 (1 .18 0.04 ) faston tab. 2.8 x 0.8 2 0.5 0.75 (0.81 0 .03 ) 15 0.5 (0.59 0.02) 20 0.5 (0.79 0.02) 5.8 0.25 (0.16 0.01) 4 pitch 4.0 0.2 (0.23 0.01) (0.25 0.01) 6.3 0.3 576 2 3 80 0.3 (3.15 0.01) (3.62 0.02) 92 0.5 20 0.5 screws m5 x 0.8 (0.11 x 0.03) (0.94 0 .02 ) (0.79 0.02) 1 30 0.5 (1.18 0.02 ) 29 0 .5 (1.13 0.02) 6.1 0.3 (0.24 0.01 ) 24 0.5 18 ref. (0.71) 15 .5 0.5 (0.61 0.02) 30 0.1 (1 .18 0.04 ) faston tab. 2.8 x 0.8 20.5 0.75 (0.8 1 0.03) 15 0.5 (0.59 0.02) 20 0.5 (0.79 0.02 ) ( 0.16 0.01) 4 pitch 4.0 0.2 (0.25 0.01 ) 6.3 0.3 5 2 3 80 0.3 (3.15 0.01) ( 3.62 0.02) 92 0 .5 20 0.5 screws m5 x 0.8 (0.11 x 0.03) (0.94 0.02 ) (0.79 0.02) 1 30 0.5 (1.18 0.02) 29 0.5 ( 1.1 3 0.02) 6.1 0.3 (0 .2 4 0.01 ) 24 0 .5 18 ref. (0.71) 15.5 0.5 (0.61 0.02) 30 0.1 ( 1.18 0.0 4) faston tab. 2.8 x 0.8 20.5 0.75 (0 .8 1 0.03) 15 0.5 (0.59 0.02) 20 0.5 (0.79 0.02) (0 .1 6 0.01) pitch 4.0 0.2 (0.25 0.01) 6.3 0.3 76 2 3 80 0.3 (3.15 0.01) (3.62 0.02) 92 0.5 20 0.5 screws m5 x 0.8 (0.11 x 0.03) (0.94 0.02) (0.79 0.02) 1 note: to order the optional hardware see bulletin i27900
irk.71, .91 series 5 bulletin i27132 rev. d 09/97 www.irf.com irk t 91 / 16 s90 device code 1 2 34 5 1 - module type 2 - circuit configuration (see circuit configuration table) 3 - current code * * 4 - voltage code (see voltage ratings table) 5 - dv/dt code: s90 = dv/dt 1000 v/s no letter = dv/dt 500 vs * * available with no auxiliary cathode. to specify change: 71 to 72 91 to 92 e.g. : irkt92/16 etc. ordering information table irk.92 types with no auxiliary cathode circuit configurations table irkt irkh irkl + k2 g2 - k1 g1 ~ (1) (2) (3) (4) (5) (7) (6) + - k1 g1 ~ (1) (2) (3) (4) (5) + - ~ (1) (2) (3) k2 (7) g2 (6) 6 4 13.8 (0.53) fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics 70 80 90 100 110 120 130 0 102030405060708 0 maximum allowable case temperature ( c ) 30 60 90 120 180 average on-state current (a) cond uction ang le irk.71.. series r (dc) = 0.33 k/w thjc 70 80 90 100 110 120 130 0 204060801001 20 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature ( c ) conduction period irk.71.. series r (dc) = 0.33 k/w thjc
irk.71, .91 series 6 bulletin i27132 rev. d 09/97 www.irf.com fig. 3 - on-state power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 7 - on-state power loss characteristics fig. 4 - on-state power loss characteristics 0 20 40 60 80 100 120 0 10203040506070 80 180 120 90 60 30 rms limit con ducti on an gle maximum average on-state power loss (w ) average on-state current (a) irk.71.. series per junction t = 125c j 0 20 40 60 80 100 120 140 0 20 40 60 80 100 12 0 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w ) average on-state current (a) irk.71.. series per junction t = 125c j 700 800 900 1000 1100 1200 1300 1400 1500 1600 1101 00 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a ) initial t = 125 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j at any rated load condition and with rated v applied following surge. rrm irk.71.. series per junction 600 800 1000 1200 1400 1600 1800 0.01 0.1 1 peak half sine wave on-state current (a ) pulse train duration (s) initial t = 125 c no v oltage reap plied rated v reapplied of conduction may not be maintained . rrm j maximum non repetitive surge curren t versus pulse train duration. contro l irk.71.. series per junction 0 20 40 60 80 100 120 140 maximum allowable ambient temperature ( c ) r = 0 . 1 k / w - d e l t a r t h s a 3 k / w 1 . 5 k / w 1 k / w 0 . 7 k / w 0 . 5 k / w 0 . 4 k / w 0 . 3 k / w 0 . 2 k / w 0 50 100 150 200 250 0 20 40 60 80 100 120 140 160 180 180 120 90 60 30 total rms output curr ent (a) maximum total on-state power loss (w) conduction angle irk.71.. series per module t = 125 c j
irk.71, .91 series 7 bulletin i27132 rev. d 09/97 www.irf.com fig. 9 - on-state power loss characteristics fig. 8 - on-state power loss characteristics fig. 11 - current ratings characteristics fig. 10 - current ratings characteristics 0 20 40 60 80 100 120 140 maximum allowable ambient temperature ( c ) r = 0.1 k/w - delta r t h s a 0 . 3 k / w 0 . 5 k / w 1 k / w 2 k / w 0 . 2 k / w 0 100 200 300 400 500 600 0 20 40 60 80 100 120 140 160 180 total output current (a) maximum total power loss (w) 180 (sine) 180 (rect) 2 x irk.71.. series single phase bridge connected t = 125 c j 0 20406080100120140 maximum allowable ambient temperature ( c ) 1 k / w 0 . 5 k / w 0 . 3 k / w r = 0 . 1 k / w - d e l t a r 0 . 2 k / w t h s a 0 100 200 300 400 500 600 700 800 0 40 80 120 160 200 240 total output current (a) maximum total power loss (w) 120 (rect) 3 x irk.71.. series three phase bridge connected t = 125c j 70 80 90 100 110 120 130 0 2040608010 0 30 60 90 120 180 average on-state current (a) maximum allowable case temperature ( c ) conduction angle irk.91.. series r (dc) = 0.27 k/w thjc 70 80 90 100 110 120 130 0 20 40 60 80 100 120 140 16 0 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature ( c ) conduction period irk.91.. series r (dc) = 0.27 k/w thjc
irk.71, .91 series 8 bulletin i27132 rev. d 09/97 www.irf.com fig. 14 - maximum non-repetitive surge current fig. 15 - maximum non-repetitive surge current fig. 13 - on-state power loss characteristics fig. 12 - on-state power loss characteristics fig. 16 - on-state power loss characteristics 0 20 40 60 80 100 120 140 0 204060801 00 rms limit cond uction angle maximum average on-sta te pow er l oss (w ) avera ge on-s tate cur rent (a) 180 120 90 60 30 irk.91.. series per junction t = 125c j 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 16 0 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w ) average on-state current (a) irk.91.. series per junction t = 125c j 700 800 900 1000 1100 1200 1300 1400 1500 1600 1101 00 number of equal amplitude half cycle current pulses (n ) peak half sine wave on-state current (a ) initial t = 125 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j at any rated load condition and with rated v applied following surge. rrm irk.91.. series per junction 600 800 1000 1200 1400 1600 1800 0.01 0.1 1 peak half sine wave on-state current (a ) pulse train duration (s) versus pulse train duration. contro l initial t = 125 c no voltage reapplied rated v reapplied rrm j of conduction may not be ma intained . maximum non repetitive surge curren t irk.91.. series per junction 0 20 40 60 80 100 120 140 maximum allowable ambient temperature ( c ) 1 . 5 k / w 3 k / w 1 k / w 0 . 7 k / w 0 . 5 k / w 0 . 3 k / w 0 . 2 k / w r = 0 . 1 k / w - d e l t a r t h s a 0 50 100 150 200 250 300 350 0 40 80 120 160 200 240 180 120 90 60 30 total rms output current (a) maximum total on-state power loss (w) conduction angle irk.91.. series per module t = 125c j
irk.71, .91 series 9 bulletin i27132 rev. d 09/97 www.irf.com fig. 17 - on-state power loss characteristics fig. 18 - on-state power loss characteristics fig. 19 - on-state voltage drop characteristics fig. 20 - on-state voltage drop characteristics 0 20 40 60 80 100 120 140 maximum allowable ambient temperature ( c ) 0 . 5 k / w 0 . 3 k / w 0 . 2 k / w r = 0 . 1 k / w - d e l t a r 1 k / w 2 k / w t h s a 0 100 200 300 400 500 600 0 40 80 120 160 200 total output cur ren t (a) maximum total power loss (w) 180 (sine) 180 (rect) 2 x irk.91.. series single phase bridge connected t = 125 c j 0 20 40 60 80 100 120 140 maximum allowable ambient temperature ( c ) 0 . 5 k / w 1 k / w 0 . 3 k / w 0 . 2 k / w r = 0 . 1 k / w - d e l t a r t h s a 0 100 200 300 400 500 600 700 800 900 0 40 80 120 160 200 240 280 total output current (a) maximum total power loss (w) 120 (rect) 3 x irk.91.. series three phase bridge connected t = 125c j 1 10 100 1000 0.511.522.533 .5 t = 25 c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 125c j irk.91.. series per junction 1 10 100 1000 0.511.522.533.5 4 t = 25 c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 125c j irk.71.. series per junction
irk.71, .91 series 10 bulletin i27132 rev. d 09/97 www.irf.com fig. 23 - thermal impedance z thjc characteristics fig. 22 - recovery current characteristics fig. 21 - recovery charge characteristics fig. 24 - gate characteristics 20 40 60 80 100 120 140 10 20 30 40 50 60 70 80 90 10 0 maximum reverse recovery current - irr (a ) rate of fall of forward current - di/dt (a/ s) 100 a 50 a i = 200 a tm 20 a 10 a irk.71.. series irk.91.. series t = 125 c j 100 200 300 400 500 600 700 10 20 30 40 50 60 70 80 90 10 0 100 a 50 a rate of fall of on-state current - di/dt (a/ s) maximum reverse recovery char ge - qrr ( c ) i = 200 a tm 20 a 10 a irk.71.. series irk.91.. series t = 125 c j 0.01 0.1 1 0.001 0.01 0.1 1 1 0 square wave pulse duration (s) thjc transient thermal impedance z (k/w ) per junction steady state value: r = 0.33 k/w r = 0.27 k/w (dc operation) irk.71.. series irk.91.. series thjc thjc 0.1 1 10 100 0.001 0.01 0.1 1 10 100 100 0 (b) (a) rectangular gate pulse (4) (3) (2) (1) instantaneous gate current (a) instantaneous gate voltage (v) tj = -40 c tj = 25 c tj = 125 c a)recommended load line for b)recommended load line for vgd igd frequency limited by pg(av) (1) pgm = 200 w, tp = 300 s (2) pgm = 60 w, tp = 1 ms (3) pgm = 30 w, tp = 2 ms (4) pgm = 12 w, tp = 5 ms <= 30% rated di/dt: 15 v, 40 ohms tr = 1 s, tp >= 6 s rated di/dt: 20 v, 20 ohms tr = 0.5 s, tp >= 6 s irk.71../.91.. series
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